1. Add reading psram EID.
2. Configure different clock mode for different EID.
3. add API to get psram size and voltage.
4. Remove unnecessary VSPI claim.
For 32MBit@1.8V and 64MBit@3.3V psram, there should be 2 extra clock cycles after CS get high level.
For 64MBit@1.8 psram, we can just use standard SPI protocol to drive the psram. We also need to increase the HOLD time for CS in this case.
EID for psram:
32MBit 1.8v: 0x20
64MBit 1.8v: 0x26
64MBit 3.3v: 0x46
1. Bootloader reads SPI configuration from bin header, so that the burning configuration can be different with compiling configuration.
2. Psram mode init will overwrite original flash speed mode, so that users can change psram and flash speed after OTA. 3. Flash read mode(QIO/DIO…) will not be changed in app bin. It is decided by bootloader, OTA can not change this mode.
4. Add read flash ID function, and save flash ID in g_rom_flashchip
5. Set drive ability for all related GPIOs
6. Check raise VDDSDIO voltage in 80Mhz mode
7. Add check flash ID and update settings in bootloader
8. Read flash ID once and keep in global variable
9. Read flash image header once and reuse the result
Tested cases:
1. Test new and old version of bootloader
boot Flash 20M —> app Flash 80M + Psram 80M
boot Flash 40M —> app Flash 80M + Psram 80M
boot Flash 80M —> app Flash 80M + Psram 80M
boot Flash 20M —> app Flash 80M + Psram 40M
boot Flash 40M —> app Flash 80M + Psram 40M
boot Flash 80M —> app Flash 80M + Psram 40M
boot Flash 20M —> app Flash 40M + Psram 40M
boot Flash 40M —> app Flash 40M + Psram 40M
boot Flash 80M —> app Flash 40M + Psram 40M 2. Working after esp_restart reboot.